| PART |
Description |
Maker |
| Q68000-A8882 CGY180 |
Power Amplifier (DECT, PCS)
From old datasheet system
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SC3181 |
POWER AMPLIFIER APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3497 |
High Power Amplifier Application
|
Toshiba Semiconductor
|
| STC3265 |
Audio Power Amplifier Application
|
AUK
|
| 2SJ31309 |
Audio Frequency Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SJ44007 2SJ440 |
Audio Frequency Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SA1298 |
Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching Applications
|
TOSHIBA
|
| 2SK2013 |
N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION)
|
http://
Toshiba Semiconductor
|
| 2SB1429 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK201306 2SK2013 |
N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION
|
Toshiba Semiconductor
|
